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IBIS Behavioral Models:
Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site.
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TN-00-07
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11/2009
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163.98 KB
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Technical Note
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Thermal Applications:
Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature
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TN-00-08
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05/2010
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252.18 KB
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Technical Note
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Understanding Quality and Reliability Requirements for Bare Die Applications:
Describes the quality and reliability requirements for bare die applications
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TN-00-14
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10/2009
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152.83 KB
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Technical Note
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Recommended Soldering Parameters:
Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products.
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TN-00-15
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03/2007
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69.09 KB
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Technical Note
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Uprating of Semiconductors for High-Temperature Applications:
Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications
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TN-00-18
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05/2010
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428.33 KB
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Technical Note
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Understanding Signal Integrity:
Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life
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TN-00-20
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12/2009
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1.52 MB
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Technical Note
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SEMI Wafer Map Format:
Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files.
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TN-00-21
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02/2009
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110 KB
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Technical Note
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Thinning Considerations for Wafer Products:
Information on optimal wafer-thinning processes to meet specific customer requirements
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TN-00-19
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10/2009
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73.58 KB
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Technical Note
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Design Guide for Two-DIMM, Unbuffered Systems:
DDR2-533 memory design guide for two-DIMM, unbuffered systems
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TN-47-01
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12/2009
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614.72 KB
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Technical Note
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DDR2 SDRAM Offers New Features and Functionality:
Discusses the various changes in DDR2 technology and the resulting features and benefits
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TN-47-02
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12/2006
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400.7 KB
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Technical Note
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Module Pinout Decoder:
Provides sorted pin assignment tables and pin location figures for use in DDR2 DIMM signal identification, tracing, and troubleshooting
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TN-47-03
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12/2004
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215.46 KB
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Technical Note
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Calculating Memory System Power for DDR2:
Rev. B, Details how DDR2 SDRAM consumes power and provides tools to estimate power consumption in a given system
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TN-47-04
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03/2011
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1.04 MB
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Technical Note
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Power Solutions for DDR2 Notebook PCs:
Technical note providing general guidelines for designing power circuitry for DDR2 memory. Includes the DDR2 voltage requirements and encompasses a sample reference design focused on the Texas Instruments Incorporated (TI) TPS51116 DDR2 memory power solution.
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TN-47-05
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04/2010
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374.42 KB
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Technical Note
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DDR2 Simulation Support:
Covers DDR2 simulation, adding to Micron's extensive array of design support tools for system designers
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TN-47-07
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05/2005
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127.84 KB
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Technical Note
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DDR2 Package Sizes and Layout Requirements:
Covers DDR2 package sizes and layout requirements
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TN-47-08
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11/2005
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614.31 KB
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Technical Note
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DDR2 tCKE Power-Down Requirement:
Describes the tCKE timing parameter of DDR2 SDRAM.
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TN-47-14
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04/2010
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102.03 KB
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Technical Note
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Designing for High-Density DDR2 Memory:
Focuses on designing for high-density memory—addressing schemes of each density, configurations, and the subtle differences between the 4-bank and new 8-bank DDR2 devices
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TN-47-16
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12/2009
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284.38 KB
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Technical Note
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DDR2 SODIMM Optimized Address/Command Nets:
Provides the system-level designer with an overview of the DDR2 SODIMM family and offers insight into termination techniques utilized on the commands and addresses for these modules
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TN-47-17
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05/2005
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592.56 KB
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Technical Note
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DDR2 (Point-to-Point) Features and Functionality:
Rev B. Focuses on the unique memory requirements of point-to-point design layouts and describes DDR2 features and functionality
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TN-47-19
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03/2011
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706.41 KB
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Technical Note
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DDR2 (Point-to-Point) Package Sizes and Layout Basics:
General guidelines for developing the PCB floor plan
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TN-47-20
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06/2007
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408.8 KB
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Technical Note
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FBDIMM Channel Utilization (Bandwidth and Power):
Newly introduced FBDIMMs offer virtually unlimited scalability of density, a significantly reduced number of routed motherboard signals, and high bandwidth solutions, all with an extremely reliable channel protocol
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TN-47-21
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12/2009
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1.21 MB
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Technical Note
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Designing for 1.5V, Low-Power FBDIMMs:
Discusses memory power trends and identifies new low-voltage solutions for high-density DDR2 memory designs
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TN-47-22
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05/2008
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980.89 KB
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Technical Note
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Moisture Absorption in Plastic Packages:
Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture
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TN-00-01
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02/2010
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87.26 KB
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Technical Note
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Accelerate Design Cycles with Simulation Models:
Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design.
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TN-00-09
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02/2010
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206.91 KB
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Technical Note
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Design Guide - Dealing with DDR2/DDR3 Clock Jitter:
Explores DDR2/DDR3 clock jitter specifications and provides guidance on how to apply them and how to deal with violations
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TN-04-56
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09/2008
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272.53 KB
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Technical Note
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Micron Wire-Bonding Techniques:
This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products.
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TN-00-22
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11/2010
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66.13 KB
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Technical Note
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Bypass Capacitor Selection for High-Speed Designs:
Describes bypass capacitor selection for high-speed designs.
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TN-00-06
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03/2011
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481.9 KB
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Technical Note
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