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IBIS Behavioral Models:
Micron has been a member of the IBIS Open Forum for many years and fully supports the IBIS specification. IBIS models for most Micron products are available for download from the Micron Web site.
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TN-00-07
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11/2009
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163.98 KB
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Technical Note
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Thermal Applications:
Defines a general method and criteria for measuring and ensuring that Micron components and modules do not exceed the maximum allowable temperature
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TN-00-08
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05/2010
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252.18 KB
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Technical Note
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Understanding Quality and Reliability Requirements for Bare Die Applications:
Describes the quality and reliability requirements for bare die applications
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TN-00-14
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10/2009
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152.83 KB
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Technical Note
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Recommended Soldering Parameters:
Defines the recommended soldering techniques and parameters for Micron Technology, Inc., products.
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TN-00-15
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03/2007
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69.09 KB
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Technical Note
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Uprating of Semiconductors for High-Temperature Applications:
Describes the issues associated with temperature uprating and the risks involved in using components and/or systems outside the manufacturer's environmental specifications
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TN-00-18
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05/2010
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428.33 KB
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Technical Note
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Understanding Signal Integrity:
Describes how memory design, test, and verification tools can be used to the greatest advantage, from conception of a new product through end of life
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TN-00-20
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12/2009
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1.52 MB
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Technical Note
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SEMI Wafer Map Format:
Micron has adopted the wafer map file format approved by Semiconductor Equipment and Materials International (SEMI). With SEMI formatting, Micron's customers can be confident they will always receive consistent, compatible, reliable map files.
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TN-00-21
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02/2009
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110 KB
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Technical Note
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Thinning Considerations for Wafer Products:
Information on optimal wafer-thinning processes to meet specific customer requirements
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TN-00-19
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10/2009
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73.58 KB
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Technical Note
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Decoupling Capacitor Calculation for a DDR Memory Channel:
Provides a decoupling capacitor calculation for a DDR memory channel
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TN-46-02
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12/2004
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151.37 KB
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Technical Note
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Calculating DDR Memory System Power:
Describes how to calculate DDR memory system power.
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TN-46-03
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03/2005
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336.91 KB
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Technical Note
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General DDR SDRAM Functionality:
Describes DDR SDRAM functionality
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TN-46-05
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12/2001
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254.8 KB
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Technical Note
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Termination for Point-to-Point Systems:
Provides a basic understanding of transmission line theory that is important to insure signal integrity in today's high-speed digital systems.
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TN-46-06
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03/2011
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356.29 KB
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Technical Note
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DDR333 Design Guide for Two-DIMM Unbuffered Systems:
Describes DDR333 design guide for two-DIMM unbuffered systems
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TN-46-07
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12/2002
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5.93 MB
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Technical Note
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Designing for 1Gb DDR SDRAM:
Provides system designers with essential information relevant to utilizing the 1Gb double data rate (DDR) synchronous dynamic random access memory (SDRAM).
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TN-46-09
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11/2009
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175.43 KB
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Technical Note
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DDR SDRAM Point-to-Point Simulation Process:
Covers rarely addressed areas of the DDR SDRAM point-to-point simulation process
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TN-46-11
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07/2005
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330.05 KB
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Technical Note
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Mobile LPDDR Versus Standard DDR SDRAM:
An overview of the functional and mechanical differences between low-power and standard DDR and a description of exclusive features of LPDDR
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TN-46-15
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12/2007
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432.44 KB
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Technical Note
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Mobile LPDRAM Unterminated Point-to-Point System Design: Layout and Routing Tips:
Provides guidance for the development of multilayer board designs
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TN-46-19
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11/2008
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552.55 KB
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Technical Note
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Moisture Absorption in Plastic Packages:
Describes shipping procedures for preventing memory devices from absorbing moisture and recommendations for baking devices exposed to excessive moisture
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TN-00-01
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02/2010
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87.26 KB
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Technical Note
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Accelerate Design Cycles with Simulation Models:
Micron supplies the tools and guidelines necessary to verify new designs prior to layout. This technical note discusses software model support, signal integrity optimization, and logic circuit design.
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TN-00-09
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02/2010
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206.91 KB
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Technical Note
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Hardware Tips for Point-to-Point System Design:
Provides hardware tips for point-to-point system design, termination, and layout
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TN-46-14
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06/2008
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376.6 KB
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Technical Note
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Initialization Sequence for DDR SDRAM:
Describes the initialization sequence and configurable device parameters.
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TN-46-08
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08/2010
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294.95 KB
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Technical Note
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Micron Wire-Bonding Techniques:
This technical note provides guidance on wire bonding techniques for both nickel-palladium (NiPd) and aluminum (Al) bond pads on Micron products.
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TN-00-22
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11/2010
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66.13 KB
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Technical Note
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Bypass Capacitor Selection for High-Speed Designs:
Describes bypass capacitor selection for high-speed designs.
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TN-00-06
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03/2011
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481.9 KB
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Technical Note
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